The SI5479DU-T1-GE3 is a P-channel TrenchFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 16A and a drain to source breakdown voltage of 12V. The device is surface mount and has a maximum power dissipation of 17.8W. It is not RoHS compliant.
Resistance0.021R
MountingSurface Mount
PolarityP-CHANNEL
Power3.1W
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Technical Specifications
Vishay SI5479DU-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 16A |
| Drain to Source Breakdown Voltage | 12V |
| Drain to Source Resistance | 21mR |
| Drain to Source Voltage (Vdss) | 12V |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 1.81nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 17.8W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 3.1W |
| Rds On Max | 21mR |
| Resistance | 0.021R |
| RoHS Compliant | No |
| Series | TrenchFET® |
| Turn-Off Delay Time | 77ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay SI5479DU-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI5479DU-T1-GE3 to view detailed technical specifications.
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