The SI5480DU-T1-GE3 is a N-CHANNEL TrenchFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 12A and a drain to source voltage of 30V. The device has a maximum power dissipation of 31W and is RoHS compliant. It is available in a surface mount package with a packaging quantity of 3000 units per reel.
Resistance0.016R
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI5480DU-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 12A |
| Drain to Source Resistance | 16mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.23nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 31W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 16mR |
| Resistance | 0.016R |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI5480DU-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI5480DU-T1-GE3 to view detailed technical specifications.
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