N-channel and P-channel MOSFET with 20V drain-source voltage and 6A continuous drain current. Features low 39mΩ Rds On, 8.3W max power dissipation, and 520pF input capacitance. Operates from -55°C to 150°C with fast switching times including 8ns turn-on delay and 55ns fall time. Surface mountable in an 8-pin PowerPAK ChipFET package, this RoHS compliant component is supplied on tape and reel.
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Vishay SI5517DU-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 6A |
| Drain to Source Resistance | 60mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 55ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.75mm |
| Input Capacitance | 520pF |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 8.3W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Power Dissipation | 2.3W |
| Radiation Hardening | No |
| Rds On Max | 39mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 8ns |
| Width | 1.9mm |
| RoHS | Compliant |
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