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Technical Specifications
Vishay SI5519DU-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 4.8A |
| Drain to Source Resistance | 64mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 8.5ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.75mm |
| Input Capacitance | 660pF |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.27W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Rds On Max | 36mR |
| RoHS Compliant | No |
| Series | SI5 |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 4.5ns |
| Width | 1.9mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay SI5519DU-T1-GE3 Datasheet
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