N-Channel Silicon Metal-oxide Semiconductor FET, 30V Drain-Source Voltage, 3.7A Continuous Drain Current, and 65mΩ Drain-Source On Resistance. This surface-mount device features a 2-element configuration with a maximum power dissipation of 3.12W and operating temperatures from -55°C to 150°C. It offers fast switching with turn-on delay time of 4ns and fall time of 12ns. Packaged in a 1206-8 CHIPFET-8 format, this RoHS compliant component is supplied on tape and reel.
PackageSMD/SMT
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay SI5902BDC-T1-E3 technical specifications.
General
Package/Case
SMD/SMT
Continuous Drain Current (ID)
3.7A
Drain to Source Resistance
65mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
65mR
Fall Time
12ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Height
1.1mm
Input Capacitance
220pF
Lead Free
Lead Free
Length
3.05mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.12W
Mount
Surface Mount
Number of Channels
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
65mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
10ns
Turn-On Delay Time
4ns
Weight
0.002998oz
Width
1.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI5902BDC-T1-E3 Datasheet
Download the complete datasheet for Vishay SI5902BDC-T1-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.