N-Channel Silicon Metal-oxide Semiconductor FET, 30V Drain-Source Voltage, 3.7A Continuous Drain Current, and 65mΩ Drain-Source On Resistance. This surface-mount device features a 2-element configuration with a maximum power dissipation of 3.12W and operating temperatures from -55°C to 150°C. It offers fast switching with turn-on delay time of 4ns and fall time of 12ns. Packaged in a 1206-8 CHIPFET-8 format, this RoHS compliant component is supplied on tape and reel.
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Vishay SI5902BDC-T1-E3 technical specifications.
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 3.7A |
| Drain to Source Resistance | 65mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 65mR |
| Fall Time | 12ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.1mm |
| Input Capacitance | 220pF |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.12W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 65mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 10ns |
| Turn-On Delay Time | 4ns |
| Weight | 0.002998oz |
| Width | 1.65mm |
| RoHS | Compliant |
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