N-Channel JFET, 2-channel, small signal transistor designed for general-purpose applications. Features a continuous drain current of 3.1A and a drain-to-source breakdown voltage of 20V. Offers a low drain-to-source on-resistance of 75mR. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 1.1W. Packaged in an SMD/SMT format for surface mounting, supplied on tape and reel.
PackageSMD/SMT
MountingSurface Mount
PolarityN-CHANNEL
Power1.1W
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Technical Specifications
Vishay SI5904DC-T1-E3 technical specifications.
General
Package/Case
SMD/SMT
Continuous Drain Current (ID)
3.1A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
75mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
75mR
Fall Time
35ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
12V
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.1W
Mount
Surface Mount
Number of Elements
2
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.1W
Radiation Hardening
No
Rds On Max
75mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1.5V
Turn-Off Delay Time
19ns
Turn-On Delay Time
12ns
Compliance
RoHS
Compliant
Datasheet
Vishay SI5904DC-T1-E3 Datasheet
Download the complete datasheet for Vishay SI5904DC-T1-E3 to view detailed technical specifications.
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