P-channel MOSFET featuring 8V drain-source voltage and 4A continuous drain current. This dual-channel device offers 80mΩ drain-to-source resistance and a maximum power dissipation of 3.1W. Designed for surface mount applications, it comes in a 1206-8 package with fast switching characteristics, including 5ns turn-on delay and 10ns fall time. Operating across a wide temperature range from -55°C to 150°C, this RoHS compliant component is supplied on tape and reel.
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Vishay SI5905BDC-T1-E3 technical specifications.
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Resistance | 80mR |
| Drain to Source Voltage (Vdss) | 8V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.1mm |
| Input Capacitance | 350pF |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Rds On Max | 80mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 5ns |
| Weight | 0.002998oz |
| Width | 1.65mm |
| RoHS | Compliant |
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