Dual N-channel MOSFET array for surface mount applications. Features 20V drain-to-source breakdown voltage and 4.4A continuous drain current. Offers low on-resistance of 40mΩ at 10V Vgs. Operates across a wide temperature range from -55°C to 150°C. Packaged in a compact 8-pin SMD/SMT format, supplied on tape and reel.
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Vishay SI5908DC-T1-E3 technical specifications.
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 4.4A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 40mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 36ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.1mm |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 40mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 20ns |
| Weight | 0.002998oz |
| Width | 1.65mm |
| RoHS | Compliant |
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