P-channel enhancement mode power MOSFET featuring a 20V drain-source voltage and 4A continuous drain current. This single, dual-drain MOSFET is housed in an 8-pin Chip FET package with flat leads, measuring 3.05mm x 1.65mm x 1.1mm (max) with a 0.65mm pin pitch. It offers a maximum drain-source on-resistance of 84 mOhm at 10V, with typical gate charge values of 8nC at 10V and 330pF input capacitance at 10V. Designed for surface mounting, this component operates across a temperature range of -55°C to 150°C and has a maximum power dissipation of 1300mW.
PackageChip FET
MountingSurface Mount
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Technical Specifications
Vishay Si5913DC technical specifications.
General
| Package Family Name | Chip FET |
| Package/Case | Chip FET |
| Lead Shape | Flat |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 3.05 |
| Package Width (mm) | 1.65 |
| Package Height (mm) | 1.1(Max) |
| Seated Plane Height (mm) | 1.14(Max) |
| Pin Pitch (mm) | 0.65 |
| Mounting | Surface Mount |
| Configuration | Single Dual Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | ±12V |
| Maximum Continuous Drain Current | 4A |
| Maximum Drain Source Resistance | 84@10VmOhm |
| Typical Gate Charge @ Vgs | 8@10V|[email protected]nC |
| Typical Gate Charge @ 10V | 8nC |
| Typical Input Capacitance @ Vds | 330@10VpF |
| Maximum Power Dissipation | 1300mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 18612 |
| EU RoHS | No |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Vishay Si5913DC Datasheet
Download the complete datasheet for Vishay Si5913DC to view detailed technical specifications.
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