N-Channel Silicon JFET, featuring a 4A continuous drain current and 8V drain-to-source voltage. This surface-mount device offers a low 32mΩ drain-to-source resistance and operates within a -55°C to 150°C temperature range. With a 2.04W maximum power dissipation and 2 N-Channel elements, it boasts fast switching characteristics including 7ns fall time and 8ns turn-on delay. Packaged in a compact 1206-8 CHIPFET-8 format, this RoHS compliant component is supplied on tape and reel.
PackageSMD/SMT
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI5920DC-T1-E3 technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Resistance | 32mR |
| Drain to Source Voltage (Vdss) | 8V |
| Fall Time | 7ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 5V |
| Height | 1.1mm |
| Input Capacitance | 680pF |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.04W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 32mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.002998oz |
| Width | 1.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI5920DC-T1-E3 Datasheet
Download the complete datasheet for Vishay SI5920DC-T1-E3 to view detailed technical specifications.
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