P-channel MOSFET for surface mount applications, featuring 20V drain-source voltage and 2.5A continuous drain current. Offers a low 144mΩ drain-source resistance at 4.5V gate-source voltage, with a maximum power dissipation of 2.8W. Designed with fast switching characteristics, including 1ns turn-on delay and 22ns turn-off delay, and an input capacitance of 276pF. Operates across a wide temperature range from -55°C to 150°C, packaged in tape and reel for efficient assembly.
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Vishay SI5933CDC-T1-E3 technical specifications.
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Resistance | 144mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 34ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.1mm |
| Input Capacitance | 276pF |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.8W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 144mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 1ns |
| Weight | 0.002998oz |
| Width | 1.65mm |
| RoHS | Compliant |
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