P-Channel MOSFET, 20V Vdss, 2.5A continuous drain current, and 144mR Rds On Max. Features a 1206-8 package for surface mounting, with 2 channels and a threshold voltage of -1V. Operates from -55°C to 150°C with a maximum power dissipation of 2.8W. Includes fast switching times with 1ns turn-on and 22ns turn-off delays.
PackageSMD/SMT
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI5933CDC-T1-GE3 technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Resistance | 144mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 144mR |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 276pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.8W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 144mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1V |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 1ns |
| Weight | 0.002998oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI5933CDC-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI5933CDC-T1-GE3 to view detailed technical specifications.
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