P-channel, 2-channel MOSFET for general-purpose small signal applications. Features a 20V drain-source voltage, 3.1A continuous drain current, and 100mΩ maximum drain-source on-resistance. Operates across a -55°C to 150°C temperature range with a 3.1W maximum power dissipation. Packaged in a compact SMD/SMT 1206-8 (CHIPFET-8) format, this component is halogen-free and RoHS compliant.
PackageSMD/SMT
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI5935CDC-T1-GE3 technical specifications.
General
Package/Case
SMD/SMT
Continuous Drain Current (ID)
3.1A
Drain to Source Resistance
100mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
100MR
Fall Time
6ns
Gate to Source Voltage (Vgs)
8V
Height
1.1mm
Input Capacitance
455pF
Lead Free
Lead Free
Length
3.1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.1W
Mount
Surface Mount
Number of Channels
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
100mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-1V
Turn-Off Delay Time
25ns
Turn-On Delay Time
10ns
Weight
0.002998oz
Width
1.7mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI5935CDC-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI5935CDC-T1-GE3 to view detailed technical specifications.
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