P-channel, 2-channel MOSFET for general-purpose small signal applications. Features a 20V drain-source voltage, 3.1A continuous drain current, and 100mΩ maximum drain-source on-resistance. Operates across a -55°C to 150°C temperature range with a 3.1W maximum power dissipation. Packaged in a compact SMD/SMT 1206-8 (CHIPFET-8) format, this component is halogen-free and RoHS compliant.
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Vishay SI5935CDC-T1-GE3 technical specifications.
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 3.1A |
| Drain to Source Resistance | 100mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 100MR |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.1mm |
| Input Capacitance | 455pF |
| Lead Free | Lead Free |
| Length | 3.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 100mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1V |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.002998oz |
| Width | 1.7mm |
| RoHS | Compliant |
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