The SI5975DC-T1 is a P-channel MOSFET from Vishay with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a continuous drain current of 3.1A and a drain to source voltage of -12V. The device has a fall time of 20ns and a turn-off delay time of 31ns. It is available in a tape and reel packaging with a quantity of 3000 units.
PolarityP-CHANNEL
Power1.1W
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Technical Specifications
Vishay SI5975DC-T1 technical specifications.
General
| Continuous Drain Current (ID) | 3.1A |
| Drain to Source Resistance | 86mR |
| Drain to Source Voltage (Vdss) | -12V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.1mm |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.1W |
| RoHS Compliant | No |
| Series | SI5 |
| Turn-Off Delay Time | 31ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.002998oz |
| Width | 1.65mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay SI5975DC-T1 Datasheet
Download the complete datasheet for Vishay SI5975DC-T1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.