The SI5975DC-T1-GE3 is a surface-mount N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 1.1W and a maximum Rds on of 86mR. This device is RoHS compliant and packaged in tape and reel. It is suitable for use in a variety of applications where a high current and low resistance are required.
PackageSMD/SMT
MountingSurface Mount
Quick Jump:
Technical Specifications
Vishay SI5975DC-T1-GE3 technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 3.1A |
| Drain to Source Voltage (Vdss) | 12V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Rds On Max | 86mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI5975DC-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI5975DC-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
