P-channel MOSFET with 20V drain-source voltage and 7.2A continuous drain current. Features low 10mΩ drain-source on-resistance and 8V gate-source voltage. Operates from -55°C to 150°C with 1.05W maximum power dissipation. Packaged in an 8-pin TSSOP for surface mounting, this component is supplied on tape and reel.
PackageTSSOP
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI6413DQ-T1-E3 technical specifications.
General
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 7.2A |
| Drain to Source Resistance | 10mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 10mR |
| Fall Time | 120ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.05W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Rds On Max | 10mR |
| Series | TrenchFET® |
| Turn-Off Delay Time | 305ns |
| Turn-On Delay Time | 55ns |
| Weight | 0.005573oz |
| Width | 4.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI6413DQ-T1-E3 Datasheet
Download the complete datasheet for Vishay SI6413DQ-T1-E3 to view detailed technical specifications.
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