The SI6413DQ-T1-GE3 is a P-CHANNEL TrenchFET MOSFET from Vishay with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 7.2A and a drain to source resistance of 10mR. The device is packaged in a TSSOP package and is RoHS compliant. It is rated for a maximum power dissipation of 1.05W and has a turn-off delay time of 305ns and a turn-on delay time of 55ns.
PackageTSSOP
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI6413DQ-T1-GE3 technical specifications.
General
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 7.2A |
| Drain to Source Resistance | 10mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 160ns |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.05W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 10mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 305ns |
| Turn-On Delay Time | 55ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI6413DQ-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI6413DQ-T1-GE3 to view detailed technical specifications.
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