P-channel power MOSFET with 30V drain-source voltage and 6.5A continuous drain current. Features low 19mΩ drain-to-source resistance and 1.5W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Packaged in a surface-mount TSSOP with dimensions of 3mm length, 4.4mm width, and 1mm height. Includes fast switching characteristics with 16ns turn-on delay and 17ns fall time. RoHS compliant.
PackageTSSOP
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI6415DQ-T1-GE3 technical specifications.
General
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 6.5A |
| Drain to Source Resistance | 19mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 19mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 73ns |
| Turn-On Delay Time | 16ns |
| Weight | 0.005573oz |
| Width | 4.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI6415DQ-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI6415DQ-T1-GE3 to view detailed technical specifications.
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