The SI6463DQ-T1-E3 is a P-channel MOSFET with a continuous drain current of 6.5A and a drain to source resistance of 20mR. It can handle a drain to source voltage of -20V and has a fall time of 30ns. The device is packaged in a TSSOP package and has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It is not RoHS compliant.
PackageTSSOP
PolarityP-CHANNEL
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Technical Specifications
Vishay SI6463DQ-T1-E3 technical specifications.
General
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 6.5A |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | -20V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1mm |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| RoHS Compliant | No |
| Series | SI6 |
| Turn-Off Delay Time | 110ns |
| Turn-On Delay Time | 30ns |
| Weight | 0.005573oz |
| Width | 4.4mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay SI6463DQ-T1-E3 Datasheet
Download the complete datasheet for Vishay SI6463DQ-T1-E3 to view detailed technical specifications.
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