The SI6475DQ-T1 is a P-channel power MOSFET from Vishay with a continuous drain current of 7.8A and a drain to source voltage of -12V. It has a maximum power dissipation of 1.08W and operates over a temperature range of -55°C to 150°C. The device is packaged in a TSSOP package and is available in quantities of 3000 per reel. It is suitable for use in power management applications.
Vishay SI6475DQ-T1 technical specifications.
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 7.8A |
| Drain to Source Resistance | 11mR |
| Drain to Source Voltage (Vdss) | -12V |
| Fall Time | 62ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.08W |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Series | SI6 |
| Turn-Off Delay Time | 300ns |
| Turn-On Delay Time | 56ns |
| Weight | 0.000705oz |
| Width | 4.4mm |
| RoHS | Not Compliant |
No datasheet is available for this part.
