Dual-channel N-channel and P-channel JFET for general-purpose small signal applications. Features a maximum drain-source voltage of 30V and a continuous drain current of 3.8A. Offers a low drain-source on-resistance of 32mR (max) and a gate-source voltage of 20V. Packaged in a surface-mount TSSOP with a maximum power dissipation of 830mW. Operates across a temperature range of -55°C to 150°C and is RoHS compliant.
PackageTSSOP
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
Power830mW
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Technical Specifications
Vishay SI6544BDQ-T1-GE3 technical specifications.
General
Package/Case
TSSOP
Continuous Drain Current (ID)
3.8A
Drain to Source Resistance
34mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
32mR
Fall Time
14ns
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
20V
Height
0.041inch
Lead Free
Lead Free
Length
0.122inch
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
830mW
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL, P-CHANNEL
Power Dissipation
830mW
Radiation Hardening
No
Rds On Max
43mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
40ns
Width
0.177inch
Compliance
RoHS
Compliant
Datasheet
Vishay SI6544BDQ-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI6544BDQ-T1-GE3 to view detailed technical specifications.
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