Dual-channel N-channel and P-channel MOSFET for general-purpose small signal applications. Features a 20V drain-to-source voltage, 6.1A continuous drain current, and low 22mΩ Rds On. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 1.7W. Packaged in a compact TSSOP surface-mount package, this component is RoHS compliant and halogen-free.
PackageTSSOP
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
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Technical Specifications
Vishay SI6562CDQ-T1-GE3 technical specifications.
General
Package/Case
TSSOP
Continuous Drain Current (ID)
6.1A
Drain to Source Resistance
24mR
Drain to Source Voltage (Vdss)
20V
Fall Time
25ns
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
12V
Height
1mm
Input Capacitance
850pF
Lead Free
Lead Free
Length
3mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.7W
Mount
Surface Mount
Number of Channels
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL, P-CHANNEL
Radiation Hardening
No
Rds On Max
22mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
600mV
Turn-Off Delay Time
45ns
Turn-On Delay Time
30ns
Weight
0.005573oz
Width
4.4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI6562CDQ-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI6562CDQ-T1-GE3 to view detailed technical specifications.
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