Dual-channel N-channel and P-channel MOSFET for general-purpose small signal applications. Features a 20V drain-to-source voltage, 6.1A continuous drain current, and low 22mΩ Rds On. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 1.7W. Packaged in a compact TSSOP surface-mount package, this component is RoHS compliant and halogen-free.
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Vishay SI6562CDQ-T1-GE3 technical specifications.
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 6.1A |
| Drain to Source Resistance | 24mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 25ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1mm |
| Input Capacitance | 850pF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.7W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 22mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 600mV |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 30ns |
| Weight | 0.005573oz |
| Width | 4.4mm |
| RoHS | Compliant |
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