P-channel MOSFET featuring 12V drain-source voltage and 4.9A continuous drain current. Surface mountable in an 8-TSSOP package, this component offers a low 21mΩ drain-to-source resistance. Operating across a temperature range of -55°C to 150°C, it boasts fast switching characteristics with turn-on delay of 45ns and fall time of 80ns. Maximum power dissipation is 830mW.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Vishay SI6913DQ-T1-E3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 4.9A |
| Drain to Source Resistance | 21mR |
| Drain to Source Voltage (Vdss) | 12V |
| Fall Time | 80ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 830mW |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 21mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 130ns |
| Turn-On Delay Time | 45ns |
| Weight | 0.005573oz |
| Width | 4.4mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI6913DQ-T1-E3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
