P-channel MOSFET with 12V drain-source voltage and 4.9A continuous drain current. Features low 21mΩ drain-source on-resistance and 8V gate-source voltage. Operates from -55°C to 150°C with 830mW max power dissipation. Packaged in an 8-pin TSSOP for surface mounting, this component offers fast switching with turn-on delay of 45ns and fall time of 80ns.
PackageTSSOP
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI6913DQ-T1-GE3 technical specifications.
General
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 4.9A |
| Drain to Source Resistance | 21mR |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 21mR |
| Fall Time | 80ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 830mW |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 21mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -900mV |
| Turn-Off Delay Time | 130ns |
| Turn-On Delay Time | 45ns |
| Weight | 0.005573oz |
| Width | 4.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI6913DQ-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI6913DQ-T1-GE3 to view detailed technical specifications.
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