VISHAY

SI6926ADQ-T1-GE3

Datasheet

2-Ch N-Ch JFET, 20V, 4.1A, 30mR RdsOn, TSSOP

Vishay

SI6926ADQ-T1-GE3

Name: SI6926ADQ-T1-GE3 Vishay
Brand: Vishay
SKU: SI6926ADQ-T1-GE3

2-Ch N-Ch JFET, 20V, 4.1A, 30mR RdsOn, TSSOP

Dual N-channel small signal MOSFET, surface mountable in a TSSOP-8 package. Features 20V drain-source voltage, 4.1A continuous drain current, and 30mΩ maximum drain-source on-resistance. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 830mW. Includes fast switching characteristics with a 6ns turn-on delay and 16ns fall time. RoHS compliant.

PackageTSSOP

MountingSurface Mount

PolarityN-CHANNEL

Power830mW

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Technical Specifications

Vishay SI6926ADQ-T1-GE3 technical specifications.

General

Package/Case	TSSOP
Continuous Drain Current (ID)	4.1A
Drain to Source Resistance	30mR
Drain to Source Voltage (Vdss)	20V
Drain-source On Resistance-Max	30MR
Fall Time	16ns
FET Type	2 N-Channel
Gate to Source Voltage (Vgs)	8V
Height	1mm
Lead Free	Lead Free
Length	3mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	830mW
Mount	Surface Mount
Number of Channels	2
Number of Elements	2
Package Quantity	3000
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	830mW
Radiation Hardening	No
Rds On Max	30mR
Reach SVHC Compliant	Unknown
RoHS Compliant	Yes
Threshold Voltage	1V
Turn-Off Delay Time	46ns
Turn-On Delay Time	6ns
Weight	0.005573oz
Width	4.4mm