Dual N-channel small signal MOSFET, surface mountable in a TSSOP-8 package. Features 20V drain-source voltage, 4.1A continuous drain current, and 30mΩ maximum drain-source on-resistance. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 830mW. Includes fast switching characteristics with a 6ns turn-on delay and 16ns fall time. RoHS compliant.
PackageTSSOP
MountingSurface Mount
PolarityN-CHANNEL
Power830mW
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Technical Specifications
Vishay SI6926ADQ-T1-GE3 technical specifications.
General
Package/Case
TSSOP
Continuous Drain Current (ID)
4.1A
Drain to Source Resistance
30mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
30MR
Fall Time
16ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
8V
Height
1mm
Lead Free
Lead Free
Length
3mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
830mW
Mount
Surface Mount
Number of Channels
2
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
830mW
Radiation Hardening
No
Rds On Max
30mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
1V
Turn-Off Delay Time
46ns
Turn-On Delay Time
6ns
Weight
0.005573oz
Width
4.4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI6926ADQ-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI6926ADQ-T1-GE3 to view detailed technical specifications.
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