Small Signal Field-Effect Transistor, 4A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8
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| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Resistance | 35mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| RoHS Compliant | No |
| Series | SI6 |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.005573oz |
| Width | 4.4mm |
| RoHS | Not Compliant |
