N-Channel Silicon FET, 2-Element, Surface Mount. Features 30V Drain to Source Breakdown Voltage (Vdss) and 4A Continuous Drain Current (ID). Offers low 35mR Drain to Source On-Resistance (Rds On Max). Operates from -55°C to 150°C with 1W Max Power Dissipation. Packaged in TSSOP for tape and reel.
PackageTSSOP
MountingSurface Mount
PolarityN-CHANNEL
Power1W
Quick Jump:
Technical Specifications
Vishay SI6928DQ-T1-GE3 technical specifications.
General
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 35mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 35MR |
| Fall Time | 9ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Rds On Max | 35mR |
| RoHS Compliant | Yes |
| Series | SI6928DQ |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 12ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI6928DQ-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI6928DQ-T1-GE3 to view detailed technical specifications.
No datasheet is available for this part.
Product Images
