The SI6965DQ-T1-E3 is a P-channel MOSFET with a continuous drain current of 5A and a drain to source breakdown voltage of 20V. It features a drain to source resistance of 35mR and a power dissipation of 1.5W. The device is packaged in a TSSOP package and is RoHS compliant. It operates over a temperature range of -55°C to 150°C.
PackageTSSOP
PolarityP-CHANNEL
Power1.5W
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Technical Specifications
Vishay SI6965DQ-T1-E3 technical specifications.
General
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 35mR |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 12V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.5W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 110ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI6965DQ-T1-E3 Datasheet
Download the complete datasheet for Vishay SI6965DQ-T1-E3 to view detailed technical specifications.
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