Dual N-channel MOSFET, 20V Vds, 4A continuous drain current, and 30mΩ Rds(on) at 10V Vgs. Features 11ns turn-on delay and 36ns turn-off delay, with a maximum power dissipation of 830mW. Surface mountable in an 8-pin TSSOP package, operating from -55°C to 150°C.
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Vishay SI6966DQ-T1-GE3 technical specifications.
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Resistance | 30mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 11ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1mm |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 830mW |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 30mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 36ns |
| Turn-On Delay Time | 11ns |
| Weight | 0.005573oz |
| Width | 4.4mm |
| RoHS | Compliant |
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