Dual N-channel MOSFET, 20V Vds, 4A continuous drain current, and 30mΩ Rds(on) at 10V Vgs. Features 11ns turn-on delay and 36ns turn-off delay, with a maximum power dissipation of 830mW. Surface mountable in an 8-pin TSSOP package, operating from -55°C to 150°C.
PackageTSSOP
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI6966DQ-T1-GE3 technical specifications.
General
Package/Case
TSSOP
Continuous Drain Current (ID)
4A
Drain to Source Resistance
30mR
Drain to Source Voltage (Vdss)
20V
Fall Time
11ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
12V
Height
1mm
Length
3mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
830mW
Mount
Surface Mount
Number of Channels
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
30mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
36ns
Turn-On Delay Time
11ns
Weight
0.005573oz
Width
4.4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI6966DQ-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI6966DQ-T1-GE3 to view detailed technical specifications.
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