
P-channel MOSFET with 8V drain-source voltage and 5A continuous drain current. Features 30mΩ drain-to-source resistance and 8V gate-source voltage. Surface mountable in a TSSOP package, this component offers fast switching with turn-on delay of 20ns and fall time of 50ns. Maximum power dissipation is 1.1W, operating temperature range from -55°C to 150°C.
Vishay SI6967DQ-T1-GE3 technical specifications.
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