P-channel MOSFET with 8V drain-source voltage and 5A continuous drain current. Features 30mΩ drain-to-source resistance and 8V gate-source voltage. Surface mountable in a TSSOP package, this component offers fast switching with turn-on delay of 20ns and fall time of 50ns. Maximum power dissipation is 1.1W, operating temperature range from -55°C to 150°C.
PackageTSSOP
Resistance0.03R
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI6967DQ-T1-GE3 technical specifications.
General
Package/Case
TSSOP
Continuous Drain Current (ID)
5A
Drain to Source Resistance
30mR
Drain to Source Voltage (Vdss)
8V
Fall Time
50ns
Gate to Source Voltage (Vgs)
8V
Height
1mm
Length
3mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.1W
Mount
Surface Mount
Number of Channels
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Rds On Max
30mR
Resistance
0.03R
RoHS Compliant
No
Series
TrenchFET®
Turn-Off Delay Time
85ns
Turn-On Delay Time
20ns
Weight
0.005573oz
Width
4.4mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay SI6967DQ-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI6967DQ-T1-GE3 to view detailed technical specifications.
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