The SI6968BEDQ-T1 is a N-CHANNEL MOSFET with a continuous drain current rating of 6.5A and a drain to source voltage of 20V. It has a maximum power dissipation of 1.5W and a package style of TSSOP. The device operates within a temperature range of -55°C to 150°C and is not RoHS compliant. The MOSFET has a drain to source resistance of 22mR and a fall time of 330ns.
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Vishay SI6968BEDQ-T1 technical specifications.
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 6.5A |
| Drain to Source Resistance | 22mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 330ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1mm |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| RoHS Compliant | No |
| Series | SI6 |
| Turn-Off Delay Time | 860ns |
| Turn-On Delay Time | 245ns |
| Weight | 0.005573oz |
| Width | 4.4mm |
| RoHS | Not Compliant |
