Dual N-channel MOSFET featuring 20V drain-source breakdown voltage and 5.2A continuous drain current. Surface mountable in an 8-TSSOP package, this component offers a maximum on-resistance of 22mΩ. Operating across a wide temperature range from -55°C to 150°C, it supports a gate-source voltage of 12V and has a power dissipation of 1W. RoHS compliant and lead-free, it is supplied on tape and reel.
PackageTSSOP
MountingSurface Mount
PolarityN-CHANNEL
Power1W
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Technical Specifications
Vishay SI6968BEDQ-T1-E3 technical specifications.
General
Package/Case
TSSOP
Continuous Drain Current (ID)
5.2A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
22mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
22mR
Fall Time
510ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
12V
Height
1mm
Lead Free
Lead Free
Length
3mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Surface Mount
Nominal Vgs
600mV
Number of Channels
2
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
1W
Radiation Hardening
No
Rds On Max
22mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
600mV
Turn-Off Delay Time
860ns
Turn-On Delay Time
245ns
Weight
0.005573oz
Width
4.4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI6968BEDQ-T1-E3 Datasheet
Download the complete datasheet for Vishay SI6968BEDQ-T1-E3 to view detailed technical specifications.
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