
Dual N-channel MOSFET featuring 20V drain-source breakdown voltage and 5.2A continuous drain current. Surface mountable in an 8-TSSOP package, this component offers a maximum on-resistance of 22mΩ. Operating across a wide temperature range from -55°C to 150°C, it supports a gate-source voltage of 12V and has a power dissipation of 1W. RoHS compliant and lead-free, it is supplied on tape and reel.
Vishay SI6968BEDQ-T1-E3 technical specifications.
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