Dual N-channel MOSFET, surface mount, in a TSSOP package. Features 20V drain-source voltage, 5.2A continuous drain current, and 22mΩ drain-source on-resistance. Operates from -55°C to 150°C with a maximum power dissipation of 1W. Includes 245ns turn-on delay and 330ns fall time. RoHS compliant and halogen-free.
PackageTSSOP
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI6968BEDQ-T1-GE3 technical specifications.
General
Package/Case
TSSOP
Continuous Drain Current (ID)
5.2A
Drain to Source Resistance
22mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
22MR
Fall Time
330ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
12V
Height
1mm
Lead Free
Lead Free
Length
3mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Surface Mount
Number of Channels
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
22mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
860ns
Turn-On Delay Time
245ns
Weight
0.005573oz
Width
4.4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI6968BEDQ-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI6968BEDQ-T1-GE3 to view detailed technical specifications.
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