The SI6973DQ-T1-E3 is a P-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 830mW and a continuous drain current of 4.1A. The device features a drain to source breakdown voltage of 20V and a drain to source resistance of 30mR. It is packaged in a TSSOP package and is suitable for surface mount applications.
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Vishay SI6973DQ-T1-E3 technical specifications.
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 4.1A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 30mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 830mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 830mW |
| Radiation Hardening | No |
| Rds On Max | 30mR |
| Series | TrenchFET® |
| Turn-Off Delay Time | 93ns |
| Turn-On Delay Time | 27ns |
| RoHS | Compliant |
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