SI6973DQ-T1-GE3

Name: SI6973DQ-T1-GE3 Vishay
Brand: Vishay
SKU: SI6973DQ-T1-GE3

MOSFET 2P-CH 20V 4.1A 8TSSOP

PackageTSSOP

MountingSurface Mount

PolarityP-CHANNEL

Power830mW

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Vishay SI6973DQ-T1-GE3 technical specifications.

Package/Case	TSSOP
Continuous Drain Current (ID)	4.1A
Drain to Source Breakdown Voltage	20V
Drain to Source Resistance	30mR
Drain to Source Voltage (Vdss)	20V
Fall Time	43ns
Gate to Source Voltage (Vgs)	8V
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	830mW
Mount	Surface Mount
Package Quantity	3000
Packaging	Tape and Reel
Polarity	P-CHANNEL
Power Dissipation	830mW
Radiation Hardening	No
Rds On Max	30mR
RoHS Compliant	Yes
Series	TrenchFET®
Turn-Off Delay Time	93ns
Turn-On Delay Time	27ns

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.