P-channel MOSFET with 20V drain-source voltage and 4.6A continuous drain current. Features 24mΩ maximum drain-source on-resistance and 8V gate-source voltage. This general-purpose transistor offers fast switching with 40ns turn-on and 135ns turn-off delay times, and a 52ns fall time. Packaged in an 8-pin TSSOP for surface mounting, it operates across a -55°C to 150°C temperature range.
PackageTSSOP
Resistance0.024R
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI6983DQ-T1-GE3 technical specifications.
General
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 4.6A |
| Drain to Source Resistance | 24mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 52ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 830mW |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Rds On Max | 24mR |
| Resistance | 0.024R |
| RoHS Compliant | No |
| Series | TrenchFET® |
| Turn-Off Delay Time | 135ns |
| Turn-On Delay Time | 40ns |
| Weight | 0.005573oz |
| Width | 4.4mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay SI6983DQ-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI6983DQ-T1-GE3 to view detailed technical specifications.
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