The SI6993DQ-T1-GE3 is a P-CHANNEL TrenchFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 3.6A and a drain to source voltage of 30V. The device features a drain to source resistance of 31mR and a maximum power dissipation of 830mW. It is packaged in a TSSOP package and is RoHS compliant.
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| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 3.6A |
| Drain to Source Resistance | 31mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 830mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 31mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 52ns |
| Turn-On Delay Time | 13ns |
| RoHS | Compliant |
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