P-Channel Power MOSFET featuring a continuous drain current of -35A and a drain-to-source breakdown voltage of -30V. Offers a low on-resistance of 7.2mR at a gate-to-source voltage of 25V. This single-element silicon Metal-oxide Semiconductor FET boasts a maximum power dissipation of 52W and operates within a temperature range of -55°C to 150°C. Surface mountable with a height of 1.12mm, it is supplied in tape and reel packaging.
MountingSurface Mount
PolarityP-CHANNEL
Power52W
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Technical Specifications
Vishay SI7101DN-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
-35A
Drain to Source Breakdown Voltage
-30V
Drain to Source Resistance
7.2mR
Drain to Source Voltage (Vdss)
-30V
Fall Time
8ns
Gate to Source Voltage (Vgs)
25V
Height
1.12mm
Input Capacitance
3.595nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
52W
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
52W
Radiation Hardening
No
Rds On Max
7.2mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-1.2V
Turn-Off Delay Time
38ns
Turn-On Delay Time
12ns
Compliance
RoHS
Compliant
Datasheet
Vishay SI7101DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7101DN-T1-GE3 to view detailed technical specifications.
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