P-Channel Power MOSFET featuring a continuous drain current of -35A and a drain-to-source breakdown voltage of -30V. Offers a low on-resistance of 7.2mR at a gate-to-source voltage of 25V. This single-element silicon Metal-oxide Semiconductor FET boasts a maximum power dissipation of 52W and operates within a temperature range of -55°C to 150°C. Surface mountable with a height of 1.12mm, it is supplied in tape and reel packaging.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Vishay SI7101DN-T1-GE3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Vishay SI7101DN-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | -35A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 7.2mR |
| Drain to Source Voltage (Vdss) | -30V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 1.12mm |
| Input Capacitance | 3.595nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 52W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 52W |
| Radiation Hardening | No |
| Rds On Max | 7.2mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1.2V |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 12ns |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI7101DN-T1-GE3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
