N-channel MOSFET transistor featuring 30V drain-source voltage and 11.3A continuous drain current. Offers low 7.5mR drain-to-source resistance and 1.5W max power dissipation. Designed for surface mount applications with a compact 3.05mm x 3.05mm x 1.04mm PowerPAK 1212 package. Includes fast switching characteristics with 10ns turn-on delay and 10ns fall time. Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
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Vishay SI7112DN-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 11.3A |
| Drain to Source Resistance | 7.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.04mm |
| Input Capacitance | 2.61nF |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 7.5mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 600mV |
| Turn-Off Delay Time | 65ns |
| Turn-On Delay Time | 10ns |
| Width | 3.05mm |
| RoHS | Compliant |
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