P-channel MOSFET for surface mount applications. Features 100V drain-source voltage and 3.5A continuous drain current. Offers a maximum drain-source on-resistance of 134mΩ. Operates within a temperature range of -50°C to 150°C with a maximum power dissipation of 52W. Includes a 30ns turn-on delay and 40ns fall time. Packaged in an 8-pin PowerPAK 1212 for tape and reel distribution.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI7113DN-T1-E3 technical specifications.
General
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Resistance | 134mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 134MR |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Input Capacitance | 1.48nF |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Max Power Dissipation | 52W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 134mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 51ns |
| Turn-On Delay Time | 30ns |
| Width | 3.05mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7113DN-T1-E3 Datasheet
Download the complete datasheet for Vishay SI7113DN-T1-E3 to view detailed technical specifications.
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