P-Channel MOSFET, 150V Vdss, 2.3A Continuous Drain Current. Features 295mΩ Max Drain-Source On Resistance, 1.19nF Input Capacitance, and 52W Max Power Dissipation. Operates from -50°C to 150°C with a 20V Gate-Source Voltage rating. Surface mountable in an 8-pin PowerPAK 1212 package, supplied on tape and reel. RoHS compliant.
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Vishay SI7115DN-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 2.3A |
| Drain to Source Resistance | 295mR |
| Drain to Source Voltage (Vdss) | -150V |
| Drain-source On Resistance-Max | 295mR |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Input Capacitance | 1.19nF |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Max Power Dissipation | 52W |
| Mount | Surface Mount |
| Nominal Vgs | -2V |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 295mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -2V |
| Turn-Off Delay Time | 52ns |
| Turn-On Delay Time | 11ns |
| Width | 3.05mm |
| RoHS | Compliant |
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