P-Channel MOSFET, 150V Vdss, 2.3A Continuous Drain Current. Features 295mΩ Max Drain-Source On Resistance, 1.19nF Input Capacitance, and 52W Max Power Dissipation. Operates from -50°C to 150°C with a 20V Gate-Source Voltage rating. Surface mountable in an 8-pin PowerPAK 1212 package, supplied on tape and reel. RoHS compliant.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI7115DN-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
2.3A
Drain to Source Resistance
295mR
Drain to Source Voltage (Vdss)
-150V
Drain-source On Resistance-Max
295mR
Fall Time
35ns
Gate to Source Voltage (Vgs)
20V
Height
1.04mm
Input Capacitance
1.19nF
Lead Free
Lead Free
Length
3.05mm
Max Operating Temperature
150°C
Min Operating Temperature
-50°C
Max Power Dissipation
52W
Mount
Surface Mount
Nominal Vgs
-2V
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
295mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-2V
Turn-Off Delay Time
52ns
Turn-On Delay Time
11ns
Width
3.05mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI7115DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7115DN-T1-GE3 to view detailed technical specifications.
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