P-Channel MOSFET, 150V Drain-Source Voltage (Vdss), 1.1A Continuous Drain Current (ID), and 1.2 Ohm Max Drain-Source On-Resistance (Rds On). Features include 7ns turn-on delay, 11ns fall time, and 16ns turn-off delay. This surface mount component operates from -55°C to 150°C with a max power dissipation of 12.5W. Packaged in tape and reel, it is RoHS compliant and lead-free.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI7117DN-T1-E3 technical specifications.
General
| Continuous Drain Current (ID) | 1.1A |
| Drain to Source Resistance | 1.2R |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 1.2R |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Input Capacitance | 510pF |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 12.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 1.2R |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 7ns |
| Width | 3.05mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7117DN-T1-E3 Datasheet
Download the complete datasheet for Vishay SI7117DN-T1-E3 to view detailed technical specifications.
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