P-channel MOSFET featuring a -200V drain-source voltage and 1.2A continuous drain current. This surface mount component offers a low 1.05 Ohm drain-source resistance at a nominal gate-source voltage of -4V. Operating across a wide temperature range from -50°C to 150°C, it supports up to 3.7W of power dissipation. The device is packaged in an 8-pin PowerPAK 1212-8 and is supplied on tape and reel.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI7119DN-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 1.2A |
| Drain to Source Resistance | 1.05R |
| Drain to Source Voltage (Vdss) | -200V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 666pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Max Power Dissipation | 3.7W |
| Mount | Surface Mount |
| Nominal Vgs | -4V |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 1.05R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -4V |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7119DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7119DN-T1-GE3 to view detailed technical specifications.
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