P-channel Power MOSFET featuring 30V drain-source voltage and 14.4A continuous drain current. This surface-mount component is housed in an 8-pin PowerPAK 1212 package with a 3.05mm x 3.05mm footprint and 1.07mm maximum height. It offers a low 11.4mOhm drain-source resistance at 10V and includes typical gate charge values of 47.5nC at 10V and 24.6nC at 4.5V. The device operates within a -50°C to 150°C temperature range.
PackagePowerPAK 1212
MountingSurface Mount
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Technical Specifications
Vishay Si7129DN technical specifications.
General
| Basic Package Type | Non-Lead-Frame SMT |
| Package Family Name | PowerPAK 1212 |
| Package/Case | PowerPAK 1212 |
| Lead Shape | No Lead |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 3.05 |
| Package Width (mm) | 3.05 |
| Package Height (mm) | 1.07(Max) |
| Seated Plane Height (mm) | 1.04 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 14.4A |
| Maximum Drain Source Resistance | 11.4@10VmOhm |
| Typical Gate Charge @ Vgs | 47.5@10V|[email protected]nC |
| Typical Gate Charge @ 10V | 47.5nC |
| Typical Input Capacitance @ Vds | 2230@15VpF |
| Maximum Power Dissipation | 3800mW |
| Min Operating Temperature | -50°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 18612 |
| EU RoHS | No |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Vishay Si7129DN Datasheet
Download the complete datasheet for Vishay Si7129DN to view detailed technical specifications.
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