P-channel MOSFET with 30V drain-source voltage and 35A continuous drain current. Features low 11.4mΩ maximum drain-source on-resistance and 14.4A pulsed drain current. Operates within -50°C to 150°C temperature range, with 52.1W maximum power dissipation. Surface-mount design in an 8-pin PowerPAK 1212 package. RoHS compliant and lead-free.
PackageTO-252-3
MountingSurface Mount
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Vishay SI7129DN-T1-GE3 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 35A |
| Drain to Source Resistance | 16mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 11.4mR |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Input Capacitance | 3.345nF |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Max Power Dissipation | 52.1W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 11.4mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 36ns |
| Turn-On Delay Time | 50ns |
| Width | 3.05mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7129DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7129DN-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
