P-Channel MOSFET with -30V Drain-Source Voltage (Vdss) and -60A Continuous Drain Current (ID). Features low 3.9mR Max Drain-Source On Resistance (Rds On) and 5mR Drain to Source Resistance. Operates with a Gate to Source Voltage (Vgs) up to 20V and a nominal Vgs of -3V. This surface mount component is housed in an 8-pin SOIC package, offering a Max Power Dissipation of 104W and a Max Operating Temperature of 150°C. RoHS compliant and lead-free.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power6.25W
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Technical Specifications
Vishay SI7135DP-T1-GE3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
-60A
Drain to Source Resistance
5mR
Drain to Source Voltage (Vdss)
-30V
Drain-source On Resistance-Max
3.9mR
Fall Time
50ns
Gate to Source Voltage (Vgs)
20V
Height
1.04mm
Input Capacitance
8.65nF
Lead Free
Lead Free
Length
4.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
104W
Mount
Surface Mount
Nominal Vgs
-3V
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
6.25W
Radiation Hardening
No
Rds On Max
3.9mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-3V
Turn-Off Delay Time
110ns
Turn-On Delay Time
110ns
Weight
0.01787oz
Width
5.89mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI7135DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7135DP-T1-GE3 to view detailed technical specifications.
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