N-channel MOSFET, 20V drain-source voltage, 30A continuous drain current, and 3.2mΩ drain-source resistance. Features a 1V threshold voltage and 9ns fall time, with 3.38nF input capacitance. Operates from -55°C to 150°C, with 5W maximum power dissipation. Surface mountable in an SOIC package, supplied on tape and reel.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power5W
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Technical Specifications
Vishay SI7136DP-T1-GE3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
30A
Drain to Source Resistance
3.2mR
Drain to Source Voltage (Vdss)
20V
Fall Time
9ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
3.38nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
5W
Mount
Surface Mount
Nominal Vgs
1V
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
5W
Radiation Hardening
No
Rds On Max
3.2mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1V
Weight
0.01787oz
Compliance
RoHS
Compliant
Datasheet
Vishay SI7136DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7136DP-T1-GE3 to view detailed technical specifications.
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