N-channel MOSFET, 20V drain-source voltage, 30A continuous drain current, and 3.2mΩ drain-source resistance. Features a 1V threshold voltage and 9ns fall time, with 3.38nF input capacitance. Operates from -55°C to 150°C, with 5W maximum power dissipation. Surface mountable in an SOIC package, supplied on tape and reel.
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| Package/Case | SOIC |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Resistance | 3.2mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.38nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 5W |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 5W |
| Radiation Hardening | No |
| Rds On Max | 3.2mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1V |
| Weight | 0.01787oz |
| RoHS | Compliant |
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