P-Channel MOSFET, 20V Vds, -60A continuous drain current, and 1.9mΩ maximum drain-source on-resistance. Features a 1.12mm height, surface mount design, and 104W maximum power dissipation. Operates from -55°C to 150°C, with 14.3nF input capacitance and 1.9mΩ Rds On Max. This RoHS compliant component is supplied in tape and reel packaging.
MountingSurface Mount
PolarityP-CHANNEL
Power6.25W
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Technical Specifications
Vishay SI7141DP-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
-60A
Drain to Source Resistance
1.9mR
Drain to Source Voltage (Vdss)
-20V
Drain-source On Resistance-Max
1.9mR
Fall Time
55ns
Gate to Source Voltage (Vgs)
20V
Height
1.12mm
Input Capacitance
14.3nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
104W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
6.25W
Radiation Hardening
No
Rds On Max
1.9mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-1V
Turn-Off Delay Time
100ns
Turn-On Delay Time
130ns
Weight
0.01787oz
Compliance
RoHS
Compliant
Datasheet
Vishay SI7141DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7141DP-T1-GE3 to view detailed technical specifications.
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