P-Channel MOSFET, 20V Vds, -60A continuous drain current, and 1.9mΩ maximum drain-source on-resistance. Features a 1.12mm height, surface mount design, and 104W maximum power dissipation. Operates from -55°C to 150°C, with 14.3nF input capacitance and 1.9mΩ Rds On Max. This RoHS compliant component is supplied in tape and reel packaging.
MountingSurface Mount
PolarityP-CHANNEL
Power6.25W
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Technical Specifications
Vishay SI7141DP-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | -60A |
| Drain to Source Resistance | 1.9mR |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 1.9mR |
| Fall Time | 55ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.12mm |
| Input Capacitance | 14.3nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 104W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 6.25W |
| Radiation Hardening | No |
| Rds On Max | 1.9mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1V |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 130ns |
| Weight | 0.01787oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7141DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7141DP-T1-GE3 to view detailed technical specifications.
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