N-channel MOSFET transistor, 75V drain-source voltage, 28A continuous drain current, and 11mΩ maximum drain-source on-resistance. Features a 2V gate-source threshold voltage and 100ns fall time. Surface mountable in an 8-pin PowerPAK SO package, this component operates from -55°C to 150°C with a maximum power dissipation of 5.4W. RoHS compliant and lead-free.
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Vishay SI7148DP-T1-E3 technical specifications.
| Continuous Drain Current (ID) | 28A |
| Drain to Source Resistance | 11mR |
| Drain to Source Voltage (Vdss) | 75V |
| Drain-source On Resistance-Max | 11mR |
| Dual Supply Voltage | 75V |
| Fall Time | 100ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Input Capacitance | 2.9nF |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 5.4W |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 11mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Termination | SMD/SMT |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 39ns |
| Turn-On Delay Time | 33ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
| RoHS | Compliant |
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