P-channel MOSFET, -20V drain-source voltage, -60A continuous drain current, and 1.25mR drain-source resistance. Features a 12V gate-source voltage, 22nF input capacitance, and 1.6mR maximum Rds On. Operates from -55°C to 150°C with a maximum power dissipation of 104W. Surface mountable in a PowerPAK SO-8 package, this RoHS compliant component offers fast switching with a 20ns turn-on delay and 55ns fall time.
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Vishay SI7157DP-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | -60A |
| Drain to Source Resistance | 1.25mR |
| Drain to Source Voltage (Vdss) | -20V |
| Fall Time | 55ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 22nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 104W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 6.25W |
| Radiation Hardening | No |
| Rds On Max | 1.6mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1.4V |
| Turn-Off Delay Time | 220ns |
| Turn-On Delay Time | 20ns |
| Weight | 0.01787oz |
| RoHS | Compliant |
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